HEADING 3818
Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics
Part of Chapter 38 — Miscellaneous Chemical Products, Section VI.
Subheadings and tariff lines
3818.00.00Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics
3818.00.00.10Gallium arsenide wafers, doped
3818.00.00.20Polycrystalline silicon wafers, doped
3818.00.00.30Silicon carbide wafers, doped
3818.00.00.95Other
Recent CBP rulings on heading 3818
N332099
April 28, 2023
The tariff classification of Doped Chemical Compounds from Russia
N223365
July 26, 2012
The tariff classification of indium phosphide gallium arsenide semiconductor wafers from an unspecified country
G86346
April 4, 2001
The tariff classification of Tellurium, Selenium, Undoped Indium Phosphide, Undoped Cadmium Telluride, Doped Indium Phosphide and Doped Cadmium Telluride, Cadmium Metal (unwrought) and Indium Metal (unwrought) from Japan
880773
December 10, 1992
The tariff classification of unpolished silicon wafers from China
846444
October 23, 1989
The tariff classification of Galliun Arsenide Wafers fromGermany.
846389
October 23, 1989
The tariff classification of Gallium Arsenide (GaAs) andIndium Antimonide (Insb) from Japan.
842711
July 6, 1989
The tariff classification of gallium arsenide wafers andcrystals from Poland
836027
January 31, 1989
The tariff classification of mercury-cadmium-telluridewafers from France
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